Emerging new information technologies such as the Internet of Things (IoT), big data, or artificial intelligence (AI) are at the forefront of the next technological revolution. They are currently based almost exclusively on CMOS (Complementary Metal Oxide Semiconductor) von Neumann architecture computing machines, for which computation and data storage are physically separated. This constitutes a bottleneck since the transfer of information between the memory elements and the computation core leads to critical issues of energy consumption and power dissipation. With the advent of these new information technologies, the demand for computation power is bound to increase and so is the power consumption. Thus, optimizing power consumption is a prerequisite for sustainable development. Spin-based beyond-CMOS technologies are attracting increased interest, as they are expected to provide ultra-low power operation, scalability, and higher bandwidths, while merging non-volatile data retention and data processing. Within this project, we target to demonstrate viable fully electrically controlled, fast, ultra-low power operation, spin-current-driven chiral magnetic domain wall transistor devices. The implementation of the project relies on a wide range of experimental techniques and methods, starting from thin film heterostructures elaboration, structural, magnetic, magneto-electric and magneto-optic characterization, to micro-patterning of functional spin-orbitronic chiral devices.